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Strain-Gradient Effect on the Energy Band Gap in Nanowires

Research Field
Physics
Resource Type
Storage
Compute
Resource Class
C
Code
HPC_11_00182
Abstract
Semiconductor nanostructures and microstructures are currently attracting tremendous interest due to their comprehensive applications in nanoscale and microscale technologies. To improve the function of nanodeives, strain engineering has long been an important approach which was used to tune the band structure and vary the properties of semiconductors. However, the traditional strain engineering is mainly limited to local strain or homogeneous strain effect , which always accompany with high strain-gradient, especially in flexible nanodevice. In this project, based on first-principle DFT calculations, we will investigate the effect of strain-gradient on the energy band gap in nanowire.\n
Duration
12.00months
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